G075N06MI

Name: G075N06MI
Brand: Goford Semiconductor

Analog & Power

N60V, 110A,RD<7M@10V,VTH1.0V~4.0

ActiveAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	7mOhm @ 20A, 10V
FET Feature	Standard
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	6443 pF @ 30 V
Manufacturer	Goford Semiconductor
Mounting Type	Surface Mount
Product Status	Active
Series	TrenchFET®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

Drain-to-Source Voltage	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Max Power Dissipation	160W (Tc)

Package	Tape & Reel (TR) Cut Tape (CT)
Supplier Device Package	TO-263

Operating Temperature	-55°C ~ 150°C (TJ)