G05NP10S

Goford Semiconductor

G05NP10S

Datasheet

Analog & Power

MOSFET 100V 5A/6A 8SOP

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs170mOhm @ 1A, 10V, 200mOhm @ 6A, 10V
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V, 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds797pF @ 25V, 760pF @ 25V
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C5A (Tc), 6A (Tc)
Power - Max3W (Tc), 2.5W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)