Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 25mOhm @ 4.5A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 10 V |
| Manufacturer | Goford Semiconductor |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Max Power Dissipation | 1.25W |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|