630AT

Name: 630AT
Brand: Goford Semiconductor

Analog & Power

N200V,RD(MAX)<250M@10V,RD(MAX)<3

ActiveTO-220-3Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	250mOhm @ 1A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	509 pF @ 25 V
Manufacturer	Goford Semiconductor
Mounting Type	Through Hole
Packaging	Tube
Part Status	Active
Series	TrenchFET®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.2V @ 250µA

Drain-to-Source Voltage	200 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Max Power Dissipation	83W (Tc)

Package / Case	TO-220-3
Supplier Device Package	TO-220

Operating Temperature	-55°C ~ 150°C (TJ)