Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 42mOhm @ 3A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 765 pF @ 30 V |
| Manufacturer | Goford Semiconductor |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.5A |
| Max Power Dissipation | 960mW |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3L |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|