General
| Capacitance @ Vr, F | 550pF @ 0V, 1MHz |
|---|---|
| Manufacturer | Global Power Technology-GPT |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Average Rectified (Io) | 44.9A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Speed | No Recovery Time > 500mA (Io) |
Mechanical
| Package | Cut Tape (CT) Tape & Box (TB) |
|---|---|
| Package / Case | 4-PowerTSFN |
| Supplier Device Package | 4-DFN (8x8) |
Environmental
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|