G3S17010B

Global Power Technology-GPT

G3S17010B

Datasheet

Analog & Power

DIODE ARR SIC 1700V TO247AB

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Diode Configuration1 Pair Common Cathode
ManufacturerGlobal Power Technology-GPT
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky

Electrical

Voltage - DC Reverse (Vr) (Max)1700 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 5 A
Current - Average Rectified (Io) (per Diode)29.5A (DC)
Current - Reverse Leakage @ Vr50 µA @ 1700 V
SpeedNo Recovery Time > 500mA (Io)

Mechanical

PackageCut Tape (CT) Tape & Box (TB)
Package / CaseTO-247-3
Supplier Device PackageTO-247AB

Environmental

Operating Temperature - Junction-55°C ~ 175°C