GD5F4GM8REYIGY

GigaDevice Semiconductor (HK) Limited

GD5F4GM8REYIGY

Datasheet

Memory & Storage

IC FLASH 4GBIT SPI/QUAD 8WSON

Active8-WDFN Exposed PadMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeNon-Volatile
TechnologyFLASH - NAND (SLC)
Access Time9 ns
ManufacturerGigaDevice Semiconductor (HK) Limited
Mounting TypeSurface Mount
PackagingTray
Part StatusActive
SeriesGD5F
Write Cycle Time600µs

Electrical

Memory Size4Gbit
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O, DTR
Clock Frequency104 MHz
Supply Voltage1.7V ~ 2V
Memory Organization512M x 8

Mechanical

Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (6x8)

Environmental

Operating Temperature-40°C ~ 85°C (TA)