GD5F1GQ5UEYIGR

GigaDevice Semiconductor (HK) Limited

GD5F1GQ5UEYIGR

Datasheet

Memory & Storage

IC FLASH 1GBIT SPI/QUAD

Active8-WDFN Exposed PadMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeNon-Volatile
TechnologyFLASH - NAND (SLC)
Access Time7 ns
ManufacturerGigaDevice Semiconductor (HK) Limited
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesGD5F
Write Cycle Time600µs

Electrical

Memory Size1Gbit
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O, QPI, DTR
Clock Frequency133 MHz
Supply Voltage2.7V ~ 3.6V
Memory Organization256M x 4

Mechanical

Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (6x8)

Environmental

Operating Temperature-40°C ~ 85°C (TA)