GD25S512MDYIGR

GigaDevice Semiconductor (HK) Limited

GD25S512MDYIGR

Memory & Storage

IC FLASH 512MBIT SPI/QUAD 8WSON

Active8-WDFN Exposed PadMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeNon-Volatile
TechnologyFLASH - NOR
Base Product NumberGD25S512
ManufacturerGigaDevice Semiconductor (HK) Limited
Mounting TypeSurface Mount
Product StatusActive
Write Cycle Time50µs, 2.4ms

Electrical

Memory Size512Mbit
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O
Clock Frequency104 MHz
Supply Voltage2.7V ~ 3.6V
Memory Organization64M x 8

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (6x8)

Environmental

Operating Temperature-40°C ~ 85°C (TA)