GD25Q16ENIGR

GigaDevice Semiconductor (HK) Limited

GD25Q16ENIGR

Datasheet

Memory & Storage

IC FLASH 16MBIT SPI/QUAD 8USON

Active8-UDFN Exposed PadMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeNon-Volatile
TechnologyFLASH - NOR
Access Time7 ns
Base Product NumberGD25Q16
ManufacturerGigaDevice Semiconductor (HK) Limited
Mounting TypeSurface Mount
Product StatusActive
Write Cycle Time70µs, 2ms

Electrical

Memory Size16Mbit
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O
Clock Frequency133 MHz
Supply Voltage2.7V ~ 3.6V
Memory Organization2M x 8

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-UDFN Exposed Pad
Supplier Device Package8-USON (4x3)

Environmental

Operating Temperature-40°C ~ 85°C (TA)