GD25Q128EWIGR

GigaDevice Semiconductor (HK) Limited

GD25Q128EWIGR

Memory & Storage

IC FLASH 128MBIT SPI/QUAD 8WSON

Active8-WDFN Exposed PadMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeNon-Volatile
TechnologyFLASH - NOR
Access Time7 ns
Base Product NumberGD25Q128
ManufacturerGigaDevice Semiconductor (HK) Limited
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
Write Cycle Time70µs, 2.4ms

Electrical

Memory Size128Mbit
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O
Clock Frequency133 MHz
Supply Voltage2.7V ~ 3.6V
Memory Organization16M x 8

Mechanical

Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (5x6)

Environmental

Operating Temperature-40°C ~ 85°C (TA)