GD25LX256EFIRR

GigaDevice Semiconductor (HK) Limited

GD25LX256EFIRR

Memory & Storage

256MBIT, 1.8V, SOP16 300MIL, IND

Active16-SOIC (0.295", 7.50mm Width)Memory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeNon-Volatile
TechnologyFLASH - NOR (SLC)
Access Time6 ns
ManufacturerGigaDevice Semiconductor (HK) Limited
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
Write Cycle Time50µs, 1.2ms

Electrical

Memory Size256Mbit
Memory FormatFLASH
Memory InterfaceSPI - Octal I/O, DTR
Clock Frequency200 MHz
Supply Voltage1.65V ~ 2V
Memory Organization32M x 8

Mechanical

Package / Case16-SOIC (0.295", 7.50mm Width)
Supplier Device Package16-SOP

Environmental

Operating Temperature-40°C ~ 85°C (TA)