GD25LQ32EWIGR

GigaDevice Semiconductor (HK) Limited

GD25LQ32EWIGR

Memory & Storage

32MBIT, 1.8V, WSON8 6*5MM, INDUS

Active8-WDFN Exposed PadMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeNon-Volatile
TechnologyFLASH - NOR (SLC)
Access Time6 ns
ManufacturerGigaDevice Semiconductor (HK) Limited
Mounting TypeSurface Mount
Product StatusActive
Write Cycle Time60µs, 2.4ms

Electrical

Memory Size32Mbit
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O, QPI
Clock Frequency133 MHz
Supply Voltage1.65V ~ 2V
Memory Organization4M x 8

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (5x6)

Environmental

Operating Temperature-40°C ~ 85°C (TA)