GD25LE80EEIGR

GigaDevice Semiconductor (HK) Limited

GD25LE80EEIGR

Datasheet

Memory & Storage

IC FLASH 8MBIT SPI/QUAD 8USON

Active8-XFDFN Exposed PadMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeNon-Volatile
TechnologyFLASH - NOR (SLC)
Access Time6 ns
ManufacturerGigaDevice Semiconductor (HK) Limited
Mounting TypeSurface Mount
Product StatusActive
SeriesGD25LE
Write Cycle Time60µs, 2.4ms

Electrical

Memory Size8Mbit
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O, QPI
Clock Frequency133 MHz
Supply Voltage1.65V ~ 2V
Memory Organization1M x 8

Mechanical

PackageTape & Reel (TR)
Package / Case8-XFDFN Exposed Pad
Supplier Device Package8-USON (3x2)

Environmental

Operating Temperature-40°C ~ 85°C (TA)