GD25LE128ESIGR

GigaDevice Semiconductor (HK) Limited

GD25LE128ESIGR

Memory & Storage

128MBIT, 1.8V, SOP8 208MIL, INDU

Active8-SOIC (0.209", 5.30mm Width)Memory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeNon-Volatile
TechnologyFLASH - NOR (SLC)
Access Time6 ns
ManufacturerGigaDevice Semiconductor (HK) Limited
Mounting TypeSurface Mount
Product StatusActive
Write Cycle Time60µs, 2.4ms

Electrical

Memory Size128Mbit
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O, QPI
Clock Frequency133 MHz
Supply Voltage1.65V ~ 2V
Memory Organization16M x 8

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.209", 5.30mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature-40°C ~ 85°C (TA)