GD25LD20EEIGR

GigaDevice Semiconductor (HK) Limited

GD25LD20EEIGR

Datasheet

Memory & Storage

IC FLASH 2MBIT SPI/DUAL 8USON

Active8-XFDFN Exposed PadMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeNon-Volatile
TechnologyFLASH - NOR (SLC)
Access Time12 ns
ManufacturerGigaDevice Semiconductor (HK) Limited
Mounting TypeSurface Mount
Product StatusActive
SeriesGD25LD
Write Cycle Time100µs, 6ms

Electrical

Memory Size2Mbit
Memory FormatFLASH
Memory InterfaceSPI - Dual I/O
Clock Frequency50 MHz
Supply Voltage1.65V ~ 2V
Memory Organization256K x 8

Mechanical

PackageTape & Reel (TR)
Package / Case8-XFDFN Exposed Pad
Supplier Device Package8-USON (3x2)

Environmental

Operating Temperature-40°C ~ 85°C (TA)