GD25LB256EWIGR

GigaDevice Semiconductor (HK) Limited

GD25LB256EWIGR

Datasheet

Memory & Storage

IC FLASH 256MBIT SPI/QUAD 8WSON

Active8-WDFN Exposed PadMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeNon-Volatile
TechnologyFLASH - NOR (SLC)
Access Time6 ns
ManufacturerGigaDevice Semiconductor (HK) Limited
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Part StatusActive
SeriesGD25LB
Write Cycle Time70µs, 1.2ms

Electrical

Memory Size256Mbit
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O, QPI, DTR
Clock Frequency166 MHz
Supply Voltage1.65V ~ 2V
Memory Organization32M x 8

Mechanical

Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (5x6)

Environmental

Operating Temperature-40°C ~ 85°C (TA)