GD25D80CEIGR

GigaDevice Semiconductor (HK) Limited

GD25D80CEIGR

Datasheet

Memory & Storage

IC FLASH 8MBIT SPI/DUAL 8USON

Active8-XFDFN Exposed PadMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeNon-Volatile
TechnologyFLASH - NOR (SLC)
Access Time6 ns
ManufacturerGigaDevice Semiconductor (HK) Limited
Mounting TypeSurface Mount
Product StatusActive
SeriesGD25D
Write Cycle Time50µs, 4ms

Electrical

Memory Size8Mbit
Memory FormatFLASH
Memory InterfaceSPI - Dual I/O
Clock Frequency100 MHz
Supply Voltage2.7V ~ 3.6V
Memory Organization1M x 8

Mechanical

PackageTape & Reel (TR)
Package / Case8-XFDFN Exposed Pad
Supplier Device Package8-USON (3x2)

Environmental

Operating Temperature-40°C ~ 85°C (TA)