GD25B512MEYJGR

GigaDevice Semiconductor (HK) Limited

GD25B512MEYJGR

Datasheet

Memory & Storage

IC FLASH 512MBIT SPI/QUAD 8WSON

Active8-WDFN Exposed PadMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeNon-Volatile
TechnologyFLASH - NOR (SLC)
ManufacturerGigaDevice Semiconductor (HK) Limited
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Part StatusActive
SeriesGD25B

Electrical

Memory Size512Mbit
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O, QPI, DTR
Clock Frequency133 MHz
Supply Voltage2.7V ~ 3.6V
Memory Organization64M x 8

Mechanical

Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (6x8)

Environmental

Operating Temperature-40°C ~ 105°C (TA)