MURTA20020

GeneSiC Semiconductor

MURTA20020

Analog & Power

DIODE MODULE GP 200V 100A 3TOWER

ActiveThree TowerAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberMURTA200
Diode Configuration1 Pair Common Cathode
ManufacturerGeneSiC Semiconductor
Mounting TypeChassis Mount
Product StatusActive
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 100 A
Current - Average Rectified (Io) (per Diode)100A
Current - Reverse Leakage @ Vr25 µA @ 200 V
SpeedStandard Recovery >500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseThree Tower
Supplier Device PackageThree Tower

Environmental

Operating Temperature - Junction-55°C ~ 150°C