MURT40040R

GeneSiC Semiconductor

MURT40040R

Analog & Power

DIODE MODULE GP 400V 200A 3TOWER

ActiveThree TowerAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberMURT400
Diode Configuration1 Pair Common Anode
ManufacturerGeneSiC Semiconductor
Mounting TypeChassis Mount
Product StatusActive
Reverse Recovery Time (trr)180 ns
TechnologyStandard, Reverse Polarity

Electrical

Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max) @ If1.35 V @ 200 A
Current - Average Rectified (Io) (per Diode)200A
Current - Reverse Leakage @ Vr25 µA @ 50 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseThree Tower
Supplier Device PackageThree Tower

Environmental

Operating Temperature - Junction-55°C ~ 150°C