MURT30040

GeneSiC Semiconductor

MURT30040

Analog & Power

DIODE MODULE GP 400V 150A 3TOWER

ActiveThree TowerAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberMURT300
Diode Configuration1 Pair Common Cathode
ManufacturerGeneSiC Semiconductor
Mounting TypeChassis Mount
Product StatusActive
Reverse Recovery Time (trr)150 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max) @ If1.35 V @ 150 A
Current - Average Rectified (Io) (per Diode)150A
Current - Reverse Leakage @ Vr25 µA @ 50 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseThree Tower
Supplier Device PackageThree Tower

Environmental

Operating Temperature - Junction-55°C ~ 150°C