MUR40060CTR

GeneSiC Semiconductor

MUR40060CTR

Analog & Power

DIODE MODULE GP 600V 200A 2TOWER

ActiveTwin TowerAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberMUR40060
Diode Configuration1 Pair Common Anode
ManufacturerGeneSiC Semiconductor
Mounting TypeChassis Mount
Product StatusActive
Reverse Recovery Time (trr)180 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 125 A
Current - Average Rectified (Io) (per Diode)200A
Current - Reverse Leakage @ Vr25 µA @ 50 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseTwin Tower
Supplier Device PackageTwin Tower

Environmental

Operating Temperature - Junction-55°C ~ 150°C