MUR20040CT

GeneSiC Semiconductor

MUR20040CT

Analog & Power

DIODE MODULE GP 400V 100A 2TOWER

ActiveTwin TowerAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberMUR20040
Diode Configuration1 Pair Common Cathode
ManufacturerGeneSiC Semiconductor
Mounting TypeChassis Mount
Product StatusActive
Reverse Recovery Time (trr)90 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 50 A
Current - Average Rectified (Io) (per Diode)100A
Current - Reverse Leakage @ Vr25 µA @ 50 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseTwin Tower
Supplier Device PackageTwin Tower

Environmental

Operating Temperature - Junction-55°C ~ 150°C