MUR20020CT

GeneSiC Semiconductor

MUR20020CT

Analog & Power

DIODE MODULE GP 200V 100A 2TOWER

ActiveTwin TowerAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberMUR20020
Diode Configuration1 Pair Common Cathode
ManufacturerGeneSiC Semiconductor
Mounting TypeChassis Mount
Product StatusActive
Reverse Recovery Time (trr)75 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 100 A
Current - Average Rectified (Io) (per Diode)100A
Current - Reverse Leakage @ Vr25 µA @ 50 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseTwin Tower
Supplier Device PackageTwin Tower

Environmental

Operating Temperature - Junction-55°C ~ 150°C