MSRTA60080A

GeneSiC Semiconductor

MSRTA60080A

Analog & Power

DIODE MODULE GP 800V 600A 3TOWER

ActiveThree TowerAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberMSRTA60080
Diode Configuration1 Pair Common Cathode
ManufacturerGeneSiC Semiconductor
Mounting TypeChassis Mount
Product StatusActive
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)800 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 600 A
Current - Average Rectified (Io) (per Diode)600A (DC)
Current - Reverse Leakage @ Vr25 µA @ 600 V
SpeedStandard Recovery >500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseThree Tower
Supplier Device PackageThree Tower

Environmental

Operating Temperature - Junction-55°C ~ 150°C