MSRT20060D

GeneSiC Semiconductor

MSRT20060D

Analog & Power

DIODE MODULE GP 600V 200A 3TOWER

ActiveThree TowerAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberMSRT200
Diode Configuration1 Pair Series Connection
ManufacturerGeneSiC Semiconductor
Mounting TypeChassis Mount
Product StatusActive
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 200 A
Current - Average Rectified (Io) (per Diode)200A
Current - Reverse Leakage @ Vr10 µA @ 600 V
SpeedStandard Recovery >500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseThree Tower
Supplier Device PackageThree Tower

Environmental

Operating Temperature - Junction-55°C ~ 150°C