General
| Base Product Number | MBR200200 |
|---|---|
| Diode Configuration | 1 Pair Common Anode |
| Manufacturer | GeneSiC Semiconductor |
| Mounting Type | Chassis Mount |
| Product Status | Active |
| Technology | Schottky |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 100 A |
| Current - Average Rectified (Io) (per Diode) | 100A |
| Current - Reverse Leakage @ Vr | 3 mA @ 200 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package | Bulk |
|---|---|
| Package / Case | Twin Tower |
| Supplier Device Package | Twin Tower |
Environmental
| Operating Temperature - Junction | -55°C ~ 150°C |
|---|