General
| Manufacturer | GeneSiC Semiconductor |
|---|---|
| Mounting Type | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | SiC Schottky MPS™ |
| Technology | SiC (Silicon Carbide) Schottky |

Structured electrical, mechanical and environmental parameters from imported product attributes.
| Manufacturer | GeneSiC Semiconductor |
|---|---|
| Mounting Type | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | SiC Schottky MPS™ |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Current - Average Rectified (Io) | 30A |
| Speed | No Recovery Time > 500mA (Io) |
| Package / Case | TO-220-2 |
|---|---|
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | 175°C |
|---|