Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | GD2X |
|---|---|
| Diode Configuration | 2 Independent |
| Manufacturer | GeneSiC Semiconductor |
| Mounting Type | Chassis Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | SiC Schottky MPS™ |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 150 A |
| Current - Average Rectified (Io) (per Diode) | 150A (DC) |
| Current - Reverse Leakage @ Vr | 10 µA @ 650 V |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tube |
|---|---|
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|