General
| Capacitance @ Vr, F | 367pF @ 1V, 1MHz |
|---|---|
| Manufacturer | GeneSiC Semiconductor |
| Mounting Type | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | SiC Schottky MPS™ |
| Technology | SiC (Silicon Carbide) Schottky |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Average Rectified (Io) | 25A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1200 V |
| Speed | No Recovery Time > 500mA (Io) |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
Environmental
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|