General
| Rds On (Max) @ Id, Vgs | 25mOhm @ 50A |
|---|---|
| Base Product Number | GA50JT06 |
| Manufacturer | GeneSiC Semiconductor |
| Mounting Type | Through Hole |
| Product Status | Active |
| Technology | SiC (Silicon Carbide Junction Transistor) |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Drain-to-Source Voltage | 600 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Max Power Dissipation | 769W (Tc) |
Mechanical
| Package | Bulk |
|---|---|
| Package / Case | TO-258-3, TO-258AA |
| Supplier Device Package | TO-258 |
Environmental
| Operating Temperature | -55°C~225°C(TJ) |
|---|