General
| Rds On (Max) @ Id, Vgs | 50mOhm @ 20A |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 3091 pF @ 800 V |
| Manufacturer | GeneSiC Semiconductor |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Technology | SiC (Silicon Carbide Junction Transistor) |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Drain-to-Source Voltage | 1200 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Max Power Dissipation | 282W (Tc) |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AB |
Environmental
| Operating Temperature | -55°C~175°C(TJ) |
|---|