Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A |
|---|---|
| Base Product Number | GA10SICP12 |
| Input Capacitance (Ciss) (Max) @ Vds | 1403 pF @ 800 V |
| Manufacturer | GeneSiC Semiconductor |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain-to-Source Voltage | 1200 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Max Power Dissipation | 170W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Supplier Device Package | TO-263-7 |
| Operating Temperature | 175°C(TJ) |
|---|