GA10JT12-263

Name: GA10JT12-263
Brand: GeneSiC Semiconductor

Analog & Power

TRANS SJT 1200V 25A

ActiveAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	120mOhm @ 10A
Base Product Number	GA10JT12
Input Capacitance (Ciss) (Max) @ Vds	1403 pF @ 800 V
Manufacturer	GeneSiC Semiconductor
Mounting Type	Surface Mount
Product Status	Active
Technology	SiC (Silicon Carbide Junction Transistor)

Drain-to-Source Voltage	1200 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Max Power Dissipation	170W (Tc)

Package	Tube

Operating Temperature	175°C(TJ)