General
| Rds On (Max) @ Id, Vgs | 240mOhm @ 5A |
|---|---|
| Base Product Number | GA05JT03 |
| Manufacturer | GeneSiC Semiconductor |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Technology | SiC (Silicon Carbide Junction Transistor) |

Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 240mOhm @ 5A |
|---|---|
| Base Product Number | GA05JT03 |
| Manufacturer | GeneSiC Semiconductor |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain-to-Source Voltage | 300 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Max Power Dissipation | 20W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | TO-46-3 |
| Supplier Device Package | TO-46 |
| Operating Temperature | -55°C~225°C(TJ) |
|---|