General
| Rds On (Max) @ Id, Vgs | 105mOhm @ 15A |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 1534 pF @ 35 V |
| Manufacturer | GeneSiC Semiconductor |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Technology | SiC (Silicon Carbide Junction Transistor) |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Drain-to-Source Voltage | 650 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) (155°C) |
| Max Power Dissipation | 172W (Tc) |
Mechanical
| Package | Bulk |
|---|---|
| Package / Case | TO-257-3 |
| Supplier Device Package | TO-257 |
Environmental
| Operating Temperature | -55°C~225°C(TJ) |
|---|