General
| Rds On (Max) @ Id, Vgs | 170mOhm @ 8A |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 35 V |
| Manufacturer | GeneSiC Semiconductor |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Technology | SiC (Silicon Carbide Junction Transistor) |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Drain-to-Source Voltage | 650 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) (158°C) |
| Max Power Dissipation | 200W (Tc) |
Mechanical
| Package | Bulk |
|---|---|
| Package / Case | TO-276AA |
| Supplier Device Package | TO-276 |
Environmental
| Operating Temperature | -55°C~225°C(TJ) |
|---|