GPIHV7DK

GaNPower

GPIHV7DK

Datasheet

Analog & Power

GaNFET N-CH 1200V 7A TO252

ActiveTape & Reel (TR)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds90 pF @ 700 V
ManufacturerGaNPower
Mounting TypeSurface Mount
Product StatusActive
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)+7.5V, -12V
Vgs(th) (Max) @ Id1.7V @ 3.5mA

Electrical

Drain-to-Source Voltage1200 V
Drive Voltage (Max Rds On, Min Rds On)6V
Current - Continuous Drain (Id) @ 25°C7A

Mechanical

PackageTape & Reel (TR)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)