Structured electrical, mechanical and environmental parameters from imported product attributes.
| FET Type | N-Channel |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 241 pF @ 400 V |
| Manufacturer | GaNPower |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | +7.5V, -12V |
| Vgs(th) (Max) @ Id | 1.2V @ 3.5mA |
| Drain-to-Source Voltage | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Current - Continuous Drain (Id) @ 25°C | 30A |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | Die |
| Supplier Device Package | Die |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|