SI4425DY

Fairchild Semiconductor

SI4425DY

Analog & Power

P-CHANNEL MOSFET

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14mOhm @ 11A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 15 V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Max Power Dissipation1W (Ta)

Mechanical

PackageBulk
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C~150°C(TJ)