SI3455DV

Fairchild Semiconductor

SI3455DV

Analog & Power

P-CHANNEL MOSFET

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs75mOhm @ 3.6A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds298 pF @ 15 V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C3.6A (Ta)
Max Power Dissipation800mW (Ta)

Mechanical

PackageBulk
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSuperSOT™-6

Environmental

Operating Temperature-55°C~150°C(TJ)