RFD16N05LSM_NL

Fairchild Semiconductor

RFD16N05LSM_NL

Analog & Power

N-CHANNEL POWER MOSFET

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs47mOhm @ 16A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id2V @ 250mA

Electrical

Drain-to-Source Voltage50 V
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Current - Continuous Drain (Id) @ 25°C16A
Max Power Dissipation60W

Mechanical

PackageBulk
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252, (D-Pak)

Environmental

Operating Temperature-55°C~150°C(TJ)