RF1S70N06SM

Fairchild Semiconductor

RF1S70N06SM

Analog & Power

N-CHANNEL POWER MOSFET

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14mOhm @ 70A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 25 V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesPSPICE®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Max Power Dissipation150W (Tc)

Mechanical

PackageBulk
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB

Environmental

Operating Temperature-55°C ~ 175°C (TJ)