NDB6030L

Fairchild Semiconductor

NDB6030L

Analog & Power

N-CHANNEL POWER MOSFET

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs13.5mOhm @ 26A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 15 V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Max Power Dissipation75W (Tc)

Mechanical

PackageBulk
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB

Environmental

Operating Temperature-65°C~175°C(TJ)