HUF76113SK8

Fairchild Semiconductor

HUF76113SK8

Analog & Power

N-CHANNEL POWER MOSFET

Active8-VFSOP (0.091", 2.30mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs30mOhm @ 6.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds585 pF @ 25 V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesUltraFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Max Power Dissipation2.5W (Ta)

Mechanical

PackageBulk
Package / Case8-VFSOP (0.091", 2.30mm Width)
Supplier Device PackageUS8

Environmental

Operating Temperature-55°C~150°C(TJ)