HUF75945G3

Fairchild Semiconductor

HUF75945G3

Analog & Power

N-CHANNEL POWER MOSFET

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs71mOhm @ 38A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs280 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds4023 pF @ 25 V
ManufacturerFairchild Semiconductor
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Max Power Dissipation310W (Tc)

Mechanical

PackageBulk
Package / CaseTO-247-3
Supplier Device PackageTO-247AD

Environmental

Operating Temperature-55°C~175°C(TJ)