HGTP12N60A4D

Fairchild Semiconductor

HGTP12N60A4D

Analog & Power

INSULATED GATE BIPOLAR TRANSISTO

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge78 nC
Input TypeStandard
ManufacturerFairchild Semiconductor
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)30 ns
Switching Energy55µJ (on), 50µJ (off)
Td (on/off) @ 25°C17ns/96ns
Test Condition390V, 12A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A

Electrical

Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)54 A
Current - Collector Pulsed (Icm)96 A
Power - Max167 W

Mechanical

PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

Environmental

Operating Temperature-55°C~150°C(TJ)