HGTD3N60C3S9A

Fairchild Semiconductor

HGTD3N60C3S9A

Analog & Power

N-CHANNEL IGBT

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge10.8 nC
Input TypeStandard
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusObsolete
Switching Energy85µJ (on), 245µJ (off)
Test Condition480V, 3A, 82Ohm, 15V
Vce(on) (Max) @ Vge, Ic2V @ 15V, 3A

Electrical

Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)6 A
Current - Collector Pulsed (Icm)24 A
Power - Max33 W

Mechanical

PackageBulk
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252, (D-Pak)

Environmental

Operating Temperature-40°C~150°C(TJ)